A NEW METHOD FOR CARRIER LIFETIME MEASUREMENTS IN PIN DIODES

被引：1
作者：
SZCZESNY, J
JELENSKI, A
机构：
来源：
SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 02期
关键词：
D O I：
10.1016/0038-1101(89)90178-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：125 / 130
页数：6
相关论文
共 17 条
[1]   PULSE-METHOD FOR MEASURING CARRIER-LIFETIME IN MIDDLE REGION OF PIN STRUCTURES [J].
BARRAU, J ;
BAILON, L ;
BRABANT, JC ;
BROUSSEAU, M .
REVUE DE PHYSIQUE APPLIQUEE, 1971, 6 (01) :19-+
[2]   OBSERVATIONS ON A METHOD OF DETERMINING CARRIER LIFETIME IN P+-NU-N+ DIODES [J].
BASSETT, RJ .
SOLID-STATE ELECTRONICS, 1969, 12 (05) :385-&
[3]   SWITCHING PROCESSES IN ALLOYED PIN RECTIFIERS [J].
BENDA, H ;
HOFFMANN, A ;
SPENKE, E .
SOLID-STATE ELECTRONICS, 1965, 8 (12) :887-&
[4]  
BENDA H, 1967, P IEEE, V55, P1831
[5]   NEW METHODS FOR CARRIER LIFETIME MEASUREMENTS IN P-PI-N STRUCTURES [J].
COLLET, J ;
BAILON, L ;
BRABANT, JC ;
BARRAU, J ;
BROUSSEAU, M .
SOLID-STATE ELECTRONICS, 1973, 16 (09) :999-1005
[6]  
DERDOURI M, 1980, IEEE T ELECTRON DEV, V12, P11
[7]  
DEVIES LW, 1963, P IEEE, V51, P1637
[8]   POWER RECTIFIERS AND TRANSISTORS [J].
HALL, RN .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1512-1518
[9]   FORWARD CHARACTERISTIC OF SILICON POWER RECTIFIERS AT HIGH CURRENT DENSITIES [J].
HERLET, A .
SOLID-STATE ELECTRONICS, 1968, 11 (08) :717-&
[10]   AN EXPERIMENTAL DETERMINATION OF THE CARRIER LIFETIME IN P-I-N DIODES FROM THE STORED CARRIER CHARGE [J].
HOFFMANN, A ;
SCHUSTER, K .
SOLID-STATE ELECTRONICS, 1964, 7 (10) :717-724
12