PROPERTIES OF HEAVILY DOPED GD-SI WITH LOW RESISTIVITY

Significant decrease in resistivity has been observed in glow-discharge-produced silicon (GDSi) containing 1019-1021 cm-3 phosphorous atoms. At the highest doping level a resistivity of 0.01 ω cm at room temperature was obtained. The temperature dependence of the resistivity follows the form, ρ{variant} = ρ{variant}0 exp(T0/T) 1 4, over a temperature range from 80-400 K. Optical absorption, which increased with wavelength and was roughly proportional to the conductivity, was observed in the longer wavelength side of the intrinsic absorption edge and it was ascribed to mobile charge carriers. Hall effect measurements have shown that μH of phosphorus doped GDSi is about 1 cm2 V-1s-1 and has a normal (negative) sign. © 1979.