INVESTIGATION OF HIGH-CONCENTRATION EFFECTS OF SB AND P IN SILICON BY COMBINATION OF SIMS AND TEM

被引：11
作者：
STINGEDER, G
PONGRATZ, P
KUHNERT, W
BRABEC, T
机构：
[1] VIENNA TECH UNIV,INST APPL & TECH PHYS,A-1040 VIENNA,AUSTRIA
[2] VIENNA TECH UNIV,INST GEN ELECT ENGN & ELECTR,A-1040 VIENNA,AUSTRIA
来源：
FRESENIUS ZEITSCHRIFT FUR ANALYTISCHE CHEMIE | 1989年 / 333卷 / 03期
关键词：
D O I：
10.1007/BF00490197
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
引用
收藏
页码：191 / 202
页数：12
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