INVESTIGATION OF HIGH-CONCENTRATION EFFECTS OF SB AND P IN SILICON BY COMBINATION OF SIMS AND TEM

被引：11
作者：
STINGEDER, G
PONGRATZ, P
KUHNERT, W
BRABEC, T
机构：
[1] VIENNA TECH UNIV,INST APPL & TECH PHYS,A-1040 VIENNA,AUSTRIA
[2] VIENNA TECH UNIV,INST GEN ELECT ENGN & ELECTR,A-1040 VIENNA,AUSTRIA
来源：
FRESENIUS ZEITSCHRIFT FUR ANALYTISCHE CHEMIE | 1989年 / 333卷 / 03期
关键词：
D O I：
10.1007/BF00490197
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
引用
收藏
页码：191 / 202
页数：12
相关论文
共 50 条
[21]   HIGH-CONCENTRATION ANTIMONY DIFFUSION INTO SILICON USING AUXILIARY WAFERS [J].
NANBA, M ;
KOZUKA, H ;
USAMI, K .
APPLIED PHYSICS LETTERS, 1981, 39 (03) :235-237
[22]   HIGH-CONCENTRATION DIFFUSION OF P IN SI - A PERCOLATION PROBLEM [J].
MATHIOT, D ;
PFISTER, JC .
JOURNAL DE PHYSIQUE LETTRES, 1982, 43 (12) :L453-L459
[23]   DIFFUSION OF ION-IMPLANTED-B IN HIGH-CONCENTRATION P-DOPED AND AS-DOPED SILICON [J].
FAIR, RB ;
PAPPAS, PN .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) :1241-1244
[24]   Numerical investigation of high-concentration photovoltaic module heat dissipation [J].
Wang, Y. N. ;
Lin, T. T. ;
Leong, J. C. ;
Hsu, Y. T. ;
Yeh, C. P. ;
Lee, P. H. ;
Tsai, C. H. .
RENEWABLE ENERGY, 2013, 50 :20-26
[25]   PROFILE ESTIMATION OF HIGH-CONCENTRATION ARSENIC OR BORON-DIFFUSION IN SILICON [J].
WANG, WS ;
LO, YH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) :1828-1831
[26]   HIGH-CONCENTRATION BORON-DIFFUSION IN SILICON - SIMULATION OF THE PRECIPITATION PHENOMENA [J].
SOLMI, S ;
LANDI, E ;
BARUFFALDI, F .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) :3250-3258
[27]   Investigation of gettering effects in CZ-type silicon with SIMS [J].
D. Krecar ;
M. Fuchs ;
R. Koegler ;
H. Hutter .
Analytical and Bioanalytical Chemistry, 2005, 381 :1526-1531
[28]   High-concentration arsenic-doped silicon hydrogenated by microwave plasma [J].
Yokota, K ;
Hosokawa, K ;
Terada, K ;
Hirai, K ;
Takano, H ;
Kumagai, M ;
Ando, Y ;
Matsuda, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (03) :1028-1033
[29]   HIGH-CONCENTRATION ARSENIC DIFFUSION IN SILICON FROM A DOPED OXIDE SOURCE [J].
FAIR, RB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) :1389-&
[30]   High-concentration ozone generator for oxidation of silicon operating at atmospheric pressure [J].
Koike, K ;
Fukuda, T ;
Ichimura, S ;
Kurokawa, A .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2000, 71 (11) :4182-4187
12345