INVESTIGATION OF HIGH-CONCENTRATION EFFECTS OF SB AND P IN SILICON BY COMBINATION OF SIMS AND TEM

被引：11
|
作者：
STINGEDER, G
PONGRATZ, P
KUHNERT, W
BRABEC, T
机构：
[1] VIENNA TECH UNIV,INST APPL & TECH PHYS,A-1040 VIENNA,AUSTRIA
[2] VIENNA TECH UNIV,INST GEN ELECT ENGN & ELECTR,A-1040 VIENNA,AUSTRIA
来源：
FRESENIUS ZEITSCHRIFT FUR ANALYTISCHE CHEMIE | 1989年 / 333卷 / 03期
关键词：
D O I：
10.1007/BF00490197
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
引用
收藏
页码：191 / 202
页数：12
相关论文
共 50 条
  • [1] STUDY OF THE REDISTRIBUTION OF HIGH-DOSE SB AND P IMPLANTS IN SILICON BY COMBINATION OF SIMS AND TEM
    STINGEDER, G
    GRASSERBAUER, M
    PONGRATZ, P
    KUHNERT, W
    WIPPEL, I
    SKALICKY, P
    GUERRERO, E
    POTZL, H
    SURFACE AND INTERFACE ANALYSIS, 1988, 12 (1-12) : 352 - 354
  • [2] RETARDED DIFFUSION OF SB IN A HIGH-CONCENTRATION AS BACKGROUND DURING SILICON OXIDATION
    PEROZZIELLO, EA
    GRIFFIN, PB
    PLUMMER, JD
    APPLIED PHYSICS LETTERS, 1992, 61 (03) : 303 - 305
  • [3] HIGH-CONCENTRATION SB DIFFUSION INTO SILICON USING AUXILIARY WAFERS AND OPTIMUM CONDITIONS
    NANBA, M
    KOZUKA, H
    NAKAMURA, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (01) : 190 - 196
  • [4] DIFFUSION OF ION-IMPLANTED BORON IN HIGH-CONCENTRATION P-, SB-, AND AS-DOPED SILICON
    FAIR, RB
    PAPPAS, PN
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : C84 - C84
  • [5] Effects of local photoexcitation of high-concentration charge carriers in silicon
    A. M. Musaev
    Semiconductors, 2017, 51 : 1290 - 1294
  • [6] Atomistic modeling of high-concentration effects of impurity diffusion in silicon
    List, S
    Ryssel, H
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (12) : 7595 - 7607
  • [7] HIGH-CONCENTRATION EFFECTS OF ION-IMPLANTED BORON IN SILICON
    RYSSEL, H
    MULLER, K
    HABERGER, K
    HENKELMANN, R
    JAHNEL, F
    APPLIED PHYSICS, 1980, 22 (01): : 35 - 38
  • [8] Effects of local photoexcitation of high-concentration charge carriers in silicon
    Musaev, A. M.
    SEMICONDUCTORS, 2017, 51 (10) : 1290 - 1294
  • [9] HIGH-CONCENTRATION EFFECTS OF ION-IMPLANTED BORON IN SILICON
    RYSSEL, H
    PRINKE, G
    HOFFMANN, K
    HABERGER, K
    MULLER, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C93 - C93
  • [10] AVALANCHE BREAKDOWN IN SILICON WITH A HIGH-CONCENTRATION OF OXYGEN
    GREKHOV, IV
    SEREZHKI.YN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (11): : 1902 - +
12345