HOT-ELECTRON TRANSPORT IN VERY SHORT SEMICONDUCTORS

被引:8
作者
HAMAGUCHI, C
机构
来源
PHYSICA B & C | 1985年 / 134卷 / 1-3期
关键词
D O I
10.1016/0378-4363(85)90325-0
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:87 / 96
页数:10
相关论文
共 44 条
[11]   HOT-CARRIER CONSTRAINTS ON TRANSIENT TRANSPORT IN VERY SMALL SEMICONDUCTOR-DEVICES [J].
FERRY, DK ;
BARKER, JR ;
GRUBIN, HL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :905-911
[12]   OPTICAL AND INTERVALLEY SCATTERING IN QUANTIZED INVERSION LAYERS IN SEMICONDUCTORS [J].
FERRY, DK .
SURFACE SCIENCE, 1976, 57 (01) :218-228
[13]   BALLISTIC AND OVERSHOOT ELECTRON-TRANSPORT IN BULK SEMICONDUCTORS AND IN SUBMICRONIC DEVICES [J].
GHIS, A ;
CONSTANT, E ;
BOITTIAUX, B .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :214-221
[14]   EFFECT OF BOUNDARY-CONDITIONS ON HOT-ELECTRON TRANSPORT IN SHORT SEMICONDUCTORS [J].
HAMAGUCHI, C ;
TERASHIMA, K ;
SHIBATOMI, A ;
RYUZAN, O .
PHYSICA B & C, 1983, 117 (MAR) :238-240
[15]  
Hamaguchi C., 1983, Japanese Journal of Applied Physics, Supplement, V22, P190
[16]  
HAMAGUCHI C, 1985, 1984 OSAK U INT S NA, P34
[17]   NON-OHMIC ELECTRON CONDUCTION IN SILICON SURFACE INVERSION LAYERS AT LOW-TEMPERATURES [J].
HESS, K ;
NEUGROSCHEL, A ;
SHIUE, CC ;
SAH, CT .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1721-1727
[18]   HOT CARRIERS IN SILICON SURFACE INVERSION LAYERS [J].
HESS, K ;
SAH, CT .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1254-1257
[19]   WARM AND HOT CARRIERS IN SILICON SURFACE-INVERSION LAYERS [J].
HESS, K ;
SAH, CT .
PHYSICAL REVIEW B, 1974, 10 (08) :3375-3386
[20]   REVIEW OF EXPERIMENTAL ASPECTS OF HOT-ELECTRON TRANSPORT IN MOS STRUCTURES [J].
HESS, K .
SOLID-STATE ELECTRONICS, 1978, 21 (01) :123-132