HOT-ELECTRON TRANSPORT IN VERY SHORT SEMICONDUCTORS

被引:8
作者
HAMAGUCHI, C
机构
来源
PHYSICA B & C | 1985年 / 134卷 / 1-3期
关键词
D O I
10.1016/0378-4363(85)90325-0
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:87 / 96
页数:10
相关论文
共 44 条
[1]   DIRECT MEASUREMENT OF VELOCITY OVERSHOOT BY HOT-ELECTRON, SUBMILLIMETER WAVE CONDUCTIVITY IN SI INVERSION-LAYERS [J].
ALLEN, SJ ;
TSUI, DC ;
DEROSA, F ;
THORNBER, KK ;
WILSON, BA .
JOURNAL DE PHYSIQUE, 1981, 42 (NC7) :369-374
[2]   ON THE PHYSICS AND MODELING OF SMALL SEMICONDUCTOR-DEVICES .1. [J].
BARKER, JR ;
FERRY, DK .
SOLID-STATE ELECTRONICS, 1980, 23 (06) :519-530
[3]   ON THE PHYSICS AND MODELING OF SMALL SEMICONDUCTOR-DEVICES .2. THE VERY SMALL DEVICE [J].
BARKER, JR ;
FERRY, DK .
SOLID-STATE ELECTRONICS, 1980, 23 (06) :531-544
[4]   HIGH-FIELD DRIFT VELOCITY OF SILICON INVERSION LAYERS - MONTE-CARLO CALCULATION [J].
BASU, PK .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) :350-353
[5]  
COOL RK, 1983, IEEE T ELECTRON DEV, V29, P970
[6]   HIGH-FIELD DRIFT VELOCITY OF ELECTRONS AT THE SI-SIO2 INTERFACE AS DETERMINED BY A TIME-OF-FLIGHT TECHNIQUE [J].
COOPER, JA ;
NELSON, DF .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1445-1456
[7]   FOURIER-ANALYSIS OF MAGNETOPHONON AND 2-DIMENSIONAL SHUBNIKOV-DE HAAS MAGNETORESISTANCE STRUCTURE [J].
EAVES, L ;
HOULT, RA ;
STRADLING, RA ;
TIDEY, RJ ;
PORTAL, JC ;
ASKENAZY, S .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (07) :1034-1053
[8]   HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J].
FANG, FF ;
FOWLER, AB .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1825-+
[9]   MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].
FAWCETT, W ;
BOARDMAN, AD ;
SWAIN, S .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) :1963-&
[10]   HOT-ELECTRON EFFECTS IN SILICON QUANTIZED INVERSION LAYERS [J].
FERRY, DK .
PHYSICAL REVIEW B, 1976, 14 (12) :5364-5371