LUMINESCENCE OF PR, ND AND YB IONS IMPLANTED IN GAAS AND GAP

被引：9

作者：

RZAKULIEV, NA ^{[1
]}

KONNOV, VM ^{[1
]}

YAKIMKIN, VN ^{[1
]}

USHAKOV, VV ^{[1
]}

GIPPIUS, AA ^{[1
]}

OSWALD, J ^{[1
]}

PASTRNAK, J ^{[1
]}

机构：

[1] CZECHOSLOVAK ACAD SCI, INST PHYS, CS-18040 PRAGUE 8, CZECHOSLOVAKIA

来源：

CZECHOSLOVAK JOURNAL OF PHYSICS | 1988年 / 38卷 / 11期

关键词：

D O I：

10.1007/BF01597299

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1288 / 1293

页数：6

共 15 条

[1] ZEEMAN ANALYSIS OF THE YTTERBIUM LUMINESCENCE IN INDIUM-PHOSPHIDE [J].

ASZODI, G ;

WEBER, J ;

UIHLEIN, C ;

PULIN, L ;

ENNEN, H ;

KAUFMANN, U ;

SCHNEIDER, J ;

WINDSCHEIF, J .

PHYSICAL REVIEW B, 1985, 31 (12) :7767-7771

[2] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON [J].

ENNEN, H ;

SCHNEIDER, J ;

POMRENKE, G ;

AXMANN, A .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :943-945

[3] RARE-EARTH ACTIVATED LUMINESCENCE IN INP, GAP AND GAAS [J].

ENNEN, H ;

KAUFMANN, U ;

POMRENKE, G ;

SCHNEIDER, J ;

WINDSCHEIF, J ;

AXMANN, A .

JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :165-168

[4] LUMINESCENCE OF THE RARE-EARTH ION YTTERBIUM IN INP, GAP, AND GAAS [J].

ENNEN, H ;

POMRENKE, G ;

AXMANN, A .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :2182-2185

[5]

ENNEN H, 1982, Patent No. 33441383

[6] YTTERBIUM-DOPED INP LIGHT-EMITTING DIODE AT 1.0-MU-M [J].

HAYDL, WH ;

MULLER, HD ;

ENNEN, H ;

KORBER, W ;

BENZ, KW .

APPLIED PHYSICS LETTERS, 1985, 46 (09) :870-872

[7]

KASATKIN VA, 1980, FIZ TEKH POLUPROV, V14, P1832

[8]

KASATKIN VA, 1984, FIZ TEKH POLUPROV, V18, P1634

[9]

KASATKIN VA, 1981, FIZ TEKH POLUPROV, V15, P616

[10]

KASATKIN VA, 1982, FIZ TEKH POLUPROV, V16, P173

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