SI(100) SURFACE UNDER AN EXTERNALLY APPLIED STRESS

被引：198

作者：

MEN, FK

PACKARD, WE

WEBB, MB

机构：

来源：

PHYSICAL REVIEW LETTERS | 1988年 / 61卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.61.2469

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2469 / 2471

页数：3

共 13 条

[1] THEORY OF RECONSTRUCTION INDUCED SUBSURFACE STRAIN - APPLICATION TO SI(100) [J].

APPELBAUM, JA ;

HAMANN, DR .

SURFACE SCIENCE, 1978, 74 (01) :21-33

[2] ACTIVATION-ENERGY FOR MIGRATION ON SILICON (111) FACE [J].

BEDAIR, SM .

SURFACE SCIENCE, 1974, 42 (02) :595-599

[3] STABILITIES OF SINGLE-LAYER AND BILAYER STEPS ON SI(001) SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1691-1694

[4]

GROSSMANN HJ, 1985, PHYS REV LETT, V55, P1106

[5] SURFACES OF SILICON [J].

HANEMAN, D .

REPORTS ON PROGRESS IN PHYSICS, 1987, 50 (08) :1045-1086

[6] EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE [J].

KEATING, PN .

PHYSICAL REVIEW, 1966, 145 (02) :637-&

[7] BIATOMIC LAYER-HIGH STEPS ON SI(001)2X1 SURFACE [J].

NAKAYAMA, T ;

TANISHIRO, Y ;

TAKAYANAGI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (04) :L280-L282

[8] CALCULATIONS OF THE SURFACE STRESS TENSOR AT ALUMINUM (111) AND (110) SURFACES [J].

NEEDS, RJ .

PHYSICAL REVIEW LETTERS, 1987, 58 (01) :53-56

[9] OBSERVATION OF (5X5) SURFACE RECONSTRUCTION ON PURE SILICON AND ITS STABILITY AGAINST NATIVE-OXIDE FORMATION [J].

OURMAZD, A ;

TAYLOR, DW ;

BEVK, J ;

DAVIDSON, BA ;

FELDMAN, LC ;

MANNAERTS, JP .

PHYSICAL REVIEW LETTERS, 1986, 57 (11) :1332-1335

[10] SI(111)-7X7 SURFACE - ENERGY-MINIMIZATION CALCULATION FOR THE DIMER ADATOM STACKING-FAULT MODEL [J].

QIAN, GX ;

CHADI, DJ .

PHYSICAL REVIEW B, 1987, 35 (03) :1288-1993

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