SATURATION OF DRIFT VELOCITY OF ELECTRONS IN SILICON-CARBIDE SUBJECTED TO STRONG ELECTRIC-FIELDS

被引：0
作者：
LEVINSHTEIN, ME [1 ]
RADOVANOVA, EI [1 ]
机构：
[1] AF IOFFE ENGN PHYS INST,LENINGRAD,USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1977年 / 11卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：232 / 234
页数：3
相关论文
共 13 条
  • [1] BERMAN HS, 1973, SILICON CARBIDE, P500
  • [2] Conwell E M, 1967, HIGH FIELD TRANSPORT
  • [3] HIGH-FIELD TRANSPORT IN WIDE-BAND-GAP SEMICONDUCTORS
    FERRY, DK
    [J]. PHYSICAL REVIEW B, 1975, 12 (06): : 2361 - 2369
  • [4] GEOMETRICAL MAGNETORESISTANCE AND HALL MOBILITY IN GUNN EFFECT DEVICES
    JERVIS, TR
    JOHNSON, EF
    [J]. SOLID-STATE ELECTRONICS, 1970, 13 (02) : 181 - &
  • [5] JOHNSON EO, 1965, RCA REV, V26, P163
  • [6] FIGURE OF MERIT FOR SEMICONDUCTORS FOR HIGH-SPEED SWITCHES
    KEYES, RW
    [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (02): : 225 - &
  • [7] Lampert M.A., 1970, CURRENT INJECTION SO
  • [8] MAGNETIC FIELD INFLUENCE ON GUNN EFFECT
    LEVINSHTEIN, ME
    NASLEDOV, DN
    SHUR, MS
    [J]. PHYSICA STATUS SOLIDI, 1969, 33 (02): : 897 - +
  • [9] LEVINSHTEIN ME, 1975, GUNN EFFECT, P37
  • [10] Lomakina G. A., 1973, Soviet Physics - Solid State, V15, P83
12