DIFFUSION OF GALLIUM IN SILICON

被引:28
作者
KURTZ, AD
GRAVEL, CL
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10.1063/1.1722968
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O59 [应用物理学];
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页码:1456 / 1459
页数:4
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共 8 条
[1]  
BARDEEN, 1946, J CHEM PHYS, V14, P4
[2]   SURFACE PROTECTION AND SELECTIVE MASKING DURING DIFFUSION IN SILICON [J].
FROSCH, CJ ;
DERICK, L .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (09) :547-552
[3]   DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J].
FULLER, CS ;
DITZENBERGER, JA .
JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) :544-553
[4]  
Johnson WA, 1942, T AM I MIN MET ENG, V147, P331
[5]  
MILLEA MF, 1958, B AM PHYS SOC 2, V3, P102
[6]   THE DEPENDENCE OF TRANSISTOR PARAMETERS ON THE DISTRIBUTION OF BASE LAYER RESISTIVITY [J].
MOLL, JL ;
ROSS, IM .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (01) :72-78
[7]  
REISS, 1956, BELL SYSTEM TECH J, V35, P535
[8]   EFFECT OF HEAVY DOPING ON THE SELF-DIFFUSION OF GERMANIUM [J].
VALENTA, MW ;
RAMASASTRY, C .
PHYSICAL REVIEW, 1957, 106 (01) :73-75