ABSORPTION-SPECTRUM OF THE H2CSI RADICAL

被引:51
作者
LECLERCQ, H
DUBOIS, I
机构
[1] Institut d'Astrophysique, Université de Liège
关键词
D O I
10.1016/0022-2852(79)90216-9
中图分类号
O64 [物理化学(理论化学)、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号
070203 ; 070304 ; 081704 ; 1406 ;
摘要
A well-resolved absorption band system, observed between 3400 and 3100 Å after a flash discharge through methylsilane, is ascribed to the free H2CSi radical. Isotopic species D2CSi and HDCSi are also observed. The transition is shown to be of the type 1B2-1A1, and rotational constants are given for the lower and the upper electronic states. © 1979.
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页码:39 / 54
页数:16
相关论文
共 6 条
[1]  
BIRSS FW, UNPUBLISHED
[2]  
DUBOIS I, 1979, 21ST LIEG INT ASTR S
[3]  
Herzberg G., 1945, INFRARED RAMAN SPECT, P300
[4]  
HERZBERG G, 1966, ELECTRONIC SPECTRA P, P104
[5]  
MURREL JN, 1977, J CHEM SOC CHEM COMM, P620
[6]   DOUBLE-BONDED DIVALENT SILICON - ABINITIO CALCULATIONS ON SPECIES HSIN, HNSI, HCSIH, AND H2CSI [J].
MURRELL, JN ;
KROTO, HW ;
GUEST, MF .
JOURNAL OF THE CHEMICAL SOCIETY-CHEMICAL COMMUNICATIONS, 1977, (17) :619-620