Structure of Cu-In-Se thin films of variable composition

被引：0
|
作者：
Grigorov, S. N. [1 ]
Kosevich, V. M. [1 ]
Taran, A., V [1 ]
机构：
[1] Natl Tech Univ, Kharkiv Polytech Inst, 21 Frunze St, UA-61002 Kharkov, Ukraine
来源：
FUNCTIONAL MATERIALS | 2009年 / 16卷 / 03期
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
TEM investigation of Cu-ln-Se thin films obtained by thermal evaporation of copper and indium selenide on KCl substrates using Vekshinsky method has been carried out. The method allows to obtain all phases of the Cu-ln(2)Se(3) film system in horizontal plane. It has been found that alpha, beta-CIS crystallites with tetragonal lattice have preferred orientation (001) CIS || (001) KCl and contain microtwins along (112) planes. beta-CIS has been revealed due to (100) and (110) superstructure reflections. Along these reflections, the streaks have been observed aiming to the existence of antiphase boundaries in the beta-CIS.
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页码：324 / 328
页数：5
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