LATTICE-STRAINED HETEROJUNCTION INGAAS/GAAS BIPOLAR STRUCTURES - RECOMBINATION PROPERTIES AND DEVICE PERFORMANCE

被引：43

作者：

RAMBERG, LP ^{[1
]}

ENQUIST, PM ^{[1
]}

CHEN, YK ^{[1
]}

NAJJAR, FE ^{[1
]}

EASTMAN, LF ^{[1
]}

FITZGERALD, EA ^{[1
]}

KAVANAGH, KL ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 03期

关键词：

D O I：

10.1063/1.338179

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1234 / 1236

页数：3

共 16 条

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[10] DETERMINATION OF THE INAS-GAAS(100) HETEROJUNCTION BAND DISCONTINUITIES BY X-RAY PHOTO-ELECTRON SPECTROSCOPY (XPS) [J].

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