BANDGAP NARROWING IN SILICON BIPOLAR-TRANSISTORS - REPLY

被引：1
作者：
MARTINELLI, RU [1 ]
机构：
[1] RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 11期
关键词：
D O I：
10.1109/T-ED.1977.19003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1310 / 1311
页数：2
相关论文
共 50 条
[41]   THE NONIDEAL CURRENT IN BIPOLAR-TRANSISTORS [J].
JONES, BK ;
KATAI, VO .
SOLID-STATE ELECTRONICS, 1987, 30 (09) :987-989
[42]   TRANSFORMERS BASED ON BIPOLAR-TRANSISTORS [J].
IGUMNOV, DV ;
KOSTYUNINA, GP ;
MASLOVSKII, VA ;
GROMOV, IS .
SOVIET MICROELECTRONICS, 1983, 12 (05) :236-240
[43]   SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
STORK, JMC ;
PATTON, GL ;
HARAME, DL ;
MEYERSON, BS ;
IYER, SS ;
GANIN, E ;
CRABBE, EF .
1989 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1989, :1-4
[44]   BIPOLAR-TRANSISTORS IN THE INVERSE MODE [J].
ORTLER, G .
FREQUENZ, 1981, 35 (08) :211-215
[45]   UNILATERAL GAIN OF HETEROJUNCTION BIPOLAR-TRANSISTORS AT MICROWAVE-FREQUENCIES - REPLY [J].
PRASAD, S ;
LEE, W ;
FONSTAD, CG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) :826-827
[46]   SOME PROPERTIES OF THE SILICON BIPOLAR-TRANSISTORS IRRADIATED WITH THERMAL-NEUTRONS [J].
MESTER, A ;
MUNTEANU, I ;
NEGREANU, M .
STUDII SI CERCETARI DE FIZICA, 1979, 31 (04) :355-361
[47]   3-GHZ 15-W SILICON BIPOLAR-TRANSISTORS [J].
UCHIZAKI, I ;
HORI, S ;
ODA, Y ;
TOMITA, N .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (12) :1038-1042
[48]   A SIMULATION STUDY OF HIGH-SPEED SILICON HETEROEMITTER BIPOLAR-TRANSISTORS [J].
UGAJIN, M ;
KONAKA, S ;
YOKOYAMA, K ;
AMEMIYA, Y .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (06) :1102-1109
[49]   A CORRELATION BETWEEN THE ELECTRICAL BREAKDOWN OF SILICON BIPOLAR-TRANSISTORS AND IMPURITY PRECIPITATES [J].
AUGUSTUS, PD ;
KNIGHTS, J ;
KENNEDY, LW .
JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (MAR) :315-320
[50]   A STUDY OF THE INFLUENCE OF HYDRODYNAMIC MODEL EFFECTS ON CHARACTERISTICS OF SILICON BIPOLAR-TRANSISTORS [J].
SADOVNIKOV, AD ;
ROULSTON, DJ .
COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING, 1993, 12 (04) :245-262
12345