BANDGAP NARROWING IN SILICON BIPOLAR-TRANSISTORS - REPLY

被引：1
作者：
MARTINELLI, RU [1 ]
机构：
[1] RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 11期
关键词：
D O I：
10.1109/T-ED.1977.19003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1310 / 1311
页数：2
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