PHOTOTHERMOACOUSTIC EFFECT IN A PIEZOELECTRIC-SEMICONDUCTOR LAYERED STRUCTURE

The results of theoretical and experimental studies of the photothermoacoustic effect in a layered piezoelectric-semiconductor plate are reported. To avoid the influence of optical irradiation on the physical properties of a semiconductor, thermal waves were excited in a piezoelectric. An expression describing the dependence of the potential difference across the piezoelectric layer on the physical and geometrical parameters of the structure under study is derived. The amplitude-frequency dependence of an information-bearing signal was experimentally studied, by using a layered x-cut quartz-silicon plate. The fitting of experimental data within the theoretical model allowed us to determine the reduced Young modulus of silicon.