MONOLITHIC INTEGRATION OF A STRAINED-LAYER INGAAS-GAAS-ALGAAS QUANTUM-WELL LASER WITH A PASSIVE WAVE-GUIDE BY SELECTIVE-AREA MOCVD

被引：7

作者：

COCKERILL, TM ^{[1
]}

FORBES, DV ^{[1
]}

HAN, H ^{[1
]}

COLEMAN, JJ ^{[1
]}

机构：

[1] UNIV ILLINOIS,MICROELECTR LAB,URBANA,IL 61801

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 04期

关键词：

D O I：

10.1109/68.212695

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Selective-area growth and regrowth by conventional atmospheric pressure MOCVD has been used to fabricate a monolithically integrated strained-layer InGaAs-GaAs-AlGaAs quantum-well laser and waveguide. Growth inhibition from a silicon dioxide mask is the mechanism used for selective-area growth rate enhancement. Variation in the width of the oxide stripe opening along the length of the device results in different quantum-well thicknesses, allowing the light generated in one selective growth region to propagate without significant absorption loss in an adjacent passive waveguide region.

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页码：448 / 450

页数：3

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