KINETIC PROCESSES IN EPITAXY OF GAXIN1-XAS ON INP(100) BY HYDRIDE VAPOR-PHASE EPITAXY

被引：2

作者：

CADORET, M

CHAPUT, L

BANVILLET, H

PORTE, A

PARISET, C

CADORET, R

机构：

[1] Laboratoire de Physique des Milieux Condensés, URA CNRS D0796, Université Blaise Pascal-Clermont II

来源：

THIN SOLID FILMS | 1990年 / 192卷 / 02期

关键词：

D O I：

10.1016/0040-6090(90)90078-R

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth of matched GaxIn1-xAs layers on InP(100) substrates using the hydride method is studied. This paper collects all detected processes that take place in the reactor: surface reactions on the substrate, non-equilibrium reactions in the vapour phase and diffusion in the vapour phase. The experimental results are consistent with the whole model. © 1990.

引用

页码：343 / 350

页数：8

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