SOME PROPERTIES OF P-N-JUNCTION IN SELENIUM MONOCRYSTAL

被引:0
|
作者
BAKIROV, MY
IBAEV, GI
机构
来源
RADIOTEKHNIKA I ELEKTRONIKA | 1972年 / 17卷 / 01期
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:199 / +
页数:1
相关论文
共 50 条
  • [21] CATALYTIC EFFECT ON SURFACE OF A P-N-JUNCTION
    FEDOROV, GG
    PRUDNIKO.RV
    KISELEV, VF
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (01): : K19 - K21
  • [22] MULTIPLICATION OF PHOTOCARRIERS IN A P-N-JUNCTION FIELD
    GUSARINA, GD
    TARKHIN, DV
    KOLCHINA, TL
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (07): : 1144 - +
  • [23] P-N-JUNCTION MICROWAVE PHASE MODULATORS
    NAVARROSTEVENSON, S
    ACTA CIENTIFICA VENEZOLANA, 1978, 29 : 118 - 118
  • [24] THERMODYNAMIC CONSIDERATIONS OF P-N-JUNCTION CAPACITANCE
    HEALD, DL
    ORDUNG, PF
    SKALNIK, JG
    NANSEN, EN
    SOLID-STATE ELECTRONICS, 1973, 16 (09) : 1055 - 1065
  • [25] CITATION CLASSIC - P-N-JUNCTION LASERS
    BURNS, G
    CURRENT CONTENTS/ENGINEERING TECHNOLOGY & APPLIED SCIENCES, 1980, (09): : 14 - 14
  • [26] GENERAL THEORY OF P-N-JUNCTION CAPACITANCE
    PARROTT, JE
    LEONIDOU, LP
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 25 (01): : 231 - 240
  • [27] ULTRATHIN GAAS P-N-JUNCTION WIRES
    HIRUMA, K
    HARAGUCHI, K
    KATSUYAMA, T
    YAZAWA, M
    KAKIBAYASHI, H
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (120): : 613 - 618
  • [28] SILICON P-N-JUNCTION ALLOY DIODES
    PEARSON, GL
    SAWYER, B
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1348 - 1351
  • [29] OFFSET VOLTAGE AND SPACE-CHARGE LAYER CAPACITANCE OF A LINEARLY GRADED P-N-JUNCTION AND AN ABRUPT P-N-JUNCTION
    HO, FD
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1990, 69 (02) : 247 - 266
  • [30] IMPEDANCE OF A P-N-JUNCTION WITH HOT CARRIERS
    DADAMIRZAEV, G
    GULYAMOV, G
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (03): : 325 - 326