共 50 条
- [3] RESONANT PHOTOEMISSION FROM THE NI-GAAS(110) INTERFACE JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 749 - 752
- [5] PHOTOEMISSION STUDY OF SURFACE STATES OF (110) GAAS SURFACE PHYSICAL REVIEW B, 1976, 13 (02): : 725 - 738
- [6] Core level photoemission study of As interaction with InP(110) and GaAs(110) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1997, 15 (03): : 1515 - 1519
- [7] RESONANT INVERSE PHOTOEMISSION OF SB MULTILAYERS ON GAAS(110) AND INP(110) SURFACES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02): : 255 - 263
- [8] ABSENCE OF CORE-EXCITON-INDUCED RESONANT PHOTOEMISSION FROM INP(110) PHYSICAL REVIEW B, 1984, 30 (04): : 2263 - 2265
- [9] PHOTOEMISSION FROM METAL DOTS ON GAAS(110) - SURFACE PHOTOVOLTAGES AND CONDUCTIVITY PHYSICAL REVIEW B, 1990, 41 (14): : 10283 - 10286
- [10] SURFACE-BARRIER AND POLARIZATION EFFECTS IN THE PHOTOEMISSION FROM GAAS(110) PHYSICAL REVIEW B, 1993, 47 (04): : 2251 - 2264