MINORITY-CARRIER TRANSPORT IN DEPLETION LAYERS OF N-I-P A-SI-H SOLAR-CELLS

被引：10

作者：

DALAL, V

ALVAREZ, F

机构：

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期

关键词：

D O I：

10.1051/jphyscol:19814104

中图分类号：

学科分类号：

摘要：

引用

页码：491 / 494

页数：4

共 11 条

[1]

BELL RO, 1980, APPL PHYS LETT, V36, P936, DOI 10.1063/1.91379

COHEN, JD ;

LANG, DV ;

HARBISON, JP .

[3]

CRANDALL R, 1970, J APPL PHYS, V50, P5506

[4] ANALYSIS OF AMORPHOUS-SILICON SOLAR-CELLS [J].

DALAL, VL .

SOLAR CELLS, 1980, 2 (03) :261-273

[5]

DALAL VL, 1979, J APPL PHYS, V40, P2980

[6]

DEBNEY BT, 1978, SOLID STATE ELECTRON, V2, P515

[7]

JOHNSON N, 1981, UNPUB P AIP C TETRAH

[8] INVESTIGATION OF AMORPHOUS-SILICON BARRIER AND P-N-JUNCTION [J].

SPEAR, WE ;

LECOMBER, PG ;

SNELL, AJ .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (03) :303-317

[9] HOLE DIFFUSION LENGTH MEASUREMENTS IN DISCHARGE-PRODUCED A-SI-H [J].

STAEBLER, DL .

[10]

TIEDJE T, 1981, UNPUB P AIP C TETRAH