INTERSTITIALCY MODEL OF SELF-DIFFUSION AND IMPURITY-DIFFUSION IN SILICON

被引：0
作者：
GOSELE, U [1 ]
机构：
[1] MAX PLANCK INST MET FORSCH,D-7000 STUTTGART 80,FED REP GER
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C91 / C92
页数：2
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