GROWTH OF SILICON EPITAXY OVER ION-IMPLANTED BURIED LAYERS

被引：0
|
作者：
KANNAN, VC [1 ]
ROPER, G [1 ]
机构：
[1] TEKTRONIX INC,BEAVERTON,OR 97005
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C120 / C120
页数：1
相关论文
共 50 条
  • [21] RECRYSTALLIZATION OF ION-IMPLANTED SILICON LAYERS .1. PB-ION IMPLANTED SI
    WILLIAMS, JS
    CHRISTODOULIDES, CE
    GRANT, WA
    ANDREW, R
    BRAWN, JR
    BOOTH, M
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 32 (1-2): : 55 - 66
  • [22] VOIDS IN ION-IMPLANTED SILICON
    ROMANOV, SI
    SMIRNOV, LS
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (1-2): : 121 - 126
  • [23] ION-IMPLANTED ARSENIC IN SILICON
    LARSEN, AN
    CHRISTENSEN, B
    CHRISTENSEN, PH
    SHIRYAEV, SY
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 697 - 701
  • [24] STRUCTURE OF ION-IMPLANTED SILICON
    MOSS, SC
    FLYNN, P
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (12): : 1392 - &
  • [25] ION-IMPLANTED SILICON TRANSISTORS
    MARSHALL, S
    SOLID STATE TECHNOLOGY, 1974, 17 (08) : 27 - 27
  • [26] CRYSTAL IMPERFECTIONS IN SILICON EPITAXIAL LAYERS GROWN ON ION-IMPLANTED SUBSTRATES
    BAKER, JFC
    OGDEN, R
    JOURNAL OF MATERIALS SCIENCE, 1975, 10 (07) : 1259 - 1261
  • [27] Evolution of structural order in germanium ion-implanted amorphous silicon layers
    Cheng, SL
    Lin, HH
    He, JH
    Chiang, TF
    Yu, CH
    Chen, LJ
    Yang, CK
    Wu, DY
    Chien, SC
    Chen, WC
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (02) : 910 - 913
  • [28] DEUTERIUM INTERACTIONS WITH ION-IMPLANTED SIO2 LAYERS IN SILICON
    MYERS, SM
    BROWN, GA
    REVESZ, AG
    HUGHES, HL
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (05) : 2196 - 2206
  • [29] QUANTITATIVE CHARACTERIZATION OF ION-IMPLANTED LAYERS IN SILICON BY ELECTRON CHANNELING PATTERNS
    ASAI, Y
    USHIO, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C98 - C98
  • [30] OPTICAL-PROPERTIES OF ION-IMPLANTED SILICON-ON-SAPPHIRE LAYERS
    WILBERTZ, C
    BHATIA, KL
    KRATSCHMER, W
    KALBITZER, S
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 2 (04): : 325 - 331
12345