SOME OBSERVATIONS ON THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN SILICON

[1] DENDRITIC GROWTH OF GERMANIUM CRYSTALS [J]. PHYSICAL REVIEW, 1959, 116 (01): : 53 - 61

[2] Blum N. A., 1972, Journal of Non-Crystalline Solids, V11, P242, DOI 10.1016/0022-3093(72)90006-3

[3] THE TEMPERATURE DISTRIBUTION IN PULLED GERMANIUM CRYSTALS DURING GROWTH [J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 183 - 187

[4] CRISTODOULIDES C, 1978, RAD EFF, V36, P73

[5] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911

[6] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240

[7] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[8] A NEW TECHNIQUE FOR OBSERVING THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN THIN SURFACE-LAYERS ON SILICON-WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4106 - 4110

[9] DROSD R, 1978, 9TH INT C EL MICR, P384

[10] GROWTH FACETS ON III-V INTERMETALLIC COMPOUNDS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (AUG) : 1119 - &

[1] DENDRITIC GROWTH OF GERMANIUM CRYSTALS [J]. PHYSICAL REVIEW, 1959, 116 (01): : 53 - 61

[2] Blum N. A., 1972, Journal of Non-Crystalline Solids, V11, P242, DOI 10.1016/0022-3093(72)90006-3

[3] THE TEMPERATURE DISTRIBUTION IN PULLED GERMANIUM CRYSTALS DURING GROWTH [J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 183 - 187

[4] CRISTODOULIDES C, 1978, RAD EFF, V36, P73

[5] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911

[6] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240

[7] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[8] A NEW TECHNIQUE FOR OBSERVING THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN THIN SURFACE-LAYERS ON SILICON-WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4106 - 4110

[9] DROSD R, 1978, 9TH INT C EL MICR, P384

[10] GROWTH FACETS ON III-V INTERMETALLIC COMPOUNDS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (AUG) : 1119 - &