PHOTOEFFECTS IN SILICON SURFACE-BARRIER DIODES

被引:45
作者
TUZZOLINO, AJ
PERKINS, MA
HUBBARD, EL
FAN, CY
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D O I
10.1063/1.1728475
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O59 [应用物理学];
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页码:148 / &
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共 20 条
[1]   HIGH INVERSE VOLTAGE GERMANIUM RECTIFIERS [J].
BENZER, S .
JOURNAL OF APPLIED PHYSICS, 1949, 20 (08) :804-815
[2]  
GARTER WW, 1958, P IRE, V46, P1422
[3]   DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J].
GARTNER, WW .
PHYSICAL REVIEW, 1959, 116 (01) :84-87
[4]  
GARTNER WW, TO BE PUBLISHED
[5]  
GARTNER WW, PERSONAL COMMUNICATI
[6]  
HANSEN W, 1961, NASNRC32 REP
[7]  
Heavens O. S., 1955, OPTICAL PROPERTIES T
[8]   NOISE IN RADIATION DETECTORS [J].
JONES, RC .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1959, 47 (09) :1481-1486
[9]  
JORDAN AG, 1960, IRE T, VED 7, P242
[10]   GAAS, A SENSITIVE PHOTODIODE FOR THE VISIBLE [J].
LUCOVSKY, G ;
CHOLET, PH .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1960, 50 (10) :979-983