STABLE SINGLEMODE OPERATION OF 0.98-MU-M GALNAS/GALNASP/GALNP BURIED RIDGE STRIPE LASER WITH ALGALNP CURRENT BLOCKING LAYER

被引：2
作者：
HASHIMOTO, J
KATSUYAMA, T
YOSHIDA, I
MURATA, M
HAYASHI, H
机构：
[1] Optoelectronics R&D Laboratories, Sumimoto Electric Industries Ltd., Taya-cho, Sakae-ku
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 14期
关键词：
SEMICONDUCTOR LASERS; LASERS;
D O I：
10.1049/el:19940785
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
By using a AlGaInP current blocking layer lattice-matched to GaAs, a GaInAs/GaInAsP/GaInP strained single quantum well (SSQW) buried ridge stripe laser emitting at 0.98mum wavelength region was fabricated and successful operation was achieved for the first time. Single-longitudinal-mode operation with single-lobed far-field patterns was obtained at up to an output power of 50mW for the uncoated laser (4 x 1000mu2) under continuous-wave (CW) operation at room temperature. In addition, CW operation beyond 50mW output was obtained at up to 100-degrees-C for the same device.
引用
收藏
页码：1146 / 1147
页数：2
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