The features of temperature dependence of contact resistivity of Au-Ti-Pd2Si-p(+)-Si ohmic contacts

被引：0

作者：

Belyaev, A. E. ^{[1
]}

Boltovets, N. S. ^{[2
]}

Kapitanchuk, L. M. ^{[3
]}

Konakova, V. ^{[1
]}

Kladko, V. P. ^{[1
]}

Kudryk, Ya. Ya. ^{[1
]}

Kuchuk, A. V. ^{[1
]}

Lytvyn, O. S. ^{[1
]}

Milenin, V. V. ^{[1
]}

Korostinskaya, T. V. ^{[2
]}

Ataubaeva, A. B. ^{[4
]}

Nevolin, P. V. ^{[1
]}

机构：

[1] NAS Ukraine, V Lashkaryov Inst Semicond Phys, 41 Prospect Nauky, UA-03028 Kiev, Ukraine

[2] State Enterprise Res Inst Orion, UA-03057 Kiev, Ukraine

[3] NAS Ukraine, EO Paton Elect Welding Inst, Kiev, Ukraine

[4] Berdakh Karakalpak State Univ, Nukus, Uzbekistan

来源：

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2010年 / 13卷 / 01期

关键词：

ohmic contact; contact resistivity; metallic shunt; palladium; palladium disilicide; p(+)-Si;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We consider the features of formation of Au-Ti-Pd ohmic contacts to p(+)-Si. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 degrees C. It is shown that the contact resistivity increases with temperature; this is typical of metallic conductivity. We suggest that the ohmic contact is formed owing to appearance of shunts at Pd deposition on dislocations or other structural defects. The number of shunts per unit area is close to the measured density of structural defects at the metal-Si interface.

引用

页码：8 / 11

页数：4