DOUBLE HETEROEPITAXY IN THE SI (111)-COSI2-SI STRUCTURE

被引：130

作者：

SAITOH, S

ISHIWARA, H

FURUKAWA, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 02期

关键词：

D O I：

10.1063/1.91825

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：203 / 205

页数：3

共 9 条

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[5]

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[7] HETEROSTRUCTURE BY SOLID-PHASE EPITAXY IN SI(111)-PD-SI(AMORPHOUS) SYSTEM [J].

LAU, SS ;

LIAU, ZL ;

NICOLET, MA ;

MAYER, JW .

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[8] SILICON EPITAXY BY SOLID-PHASE CRYSTALLIZATION OF DEPOSITED AMORPHOUS FILMS [J].

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[9]

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