ENHANCED SUPPRESSED INTERDIFFUSION OF LATTICE-MATCHED AND PSEUDOMORPHIC III-V HETEROSTRUCTURES BY CONTROLLING GA VACANCIES

被引：5

作者：

KOLBAS, RM

HWANG, YL

ZHANG, T

PRAIRIE, M

HSIEH, KY

MISHRA, UK

机构：

[1] Department of Electrical and Computer Engineering, Center for Advanced Electronic Materials Processing, North Carolina State University, Raleigh, 27695-7911, NC

来源：

OPTICAL AND QUANTUM ELECTRONICS | 1991年 / 23卷 / 07期

关键词：

D O I：

10.1007/BF00624971

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data are presented showing that the interdiffusion of Ga and Al (AlGaAs-GaAs) and of Ga and In (pseudomorphic InGaAs-GaAs) at a heterojunction can be significantly enhanced or suppressed by controlling group III vacancies and interstitials. High-resistivity low-temperature GaAs which contains excess As is shown to accelerate the interdiffusion process. The emission wavelength from monolayer-thick quantum wells can remain relatively unchanged even after annealing for 200 h at 850-degrees-C.

引用

页码：S805 / S812

页数：8

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