VERY HIGH-PURITY INP EPILAYER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：45

作者：

RAZEGHI, M ^{[1
]}

MAUREL, P ^{[1
]}

DEFOUR, M ^{[1
]}

OMNES, F ^{[1
]}

NEU, G ^{[1
]}

KOZACKI, A ^{[1
]}

机构：

[1] CNRS,F-06565 VALBONNE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 02期

关键词：

D O I：

10.1063/1.99068

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：117 / 119

页数：3

共 6 条

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JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :1-9

[2] DONOR DISCRIMINATION AND BOUND EXCITON SPECTRA IN INP [J].

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SKOLNICK, MS .

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[3] ELECTRON CORRELATION AND BOUND EXCITONS IN SEMICONDUCTORS [J].

HERBERT, DC .

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[4]

POISSON MA, 1985, APPL PHYS LETT, V46, P476

[5] 1ST OBSERVATION OF QUANTUM HALL-EFFECT IN A GAINASP-INP HETEROSTRUCTURE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

RAZEGHI, M ;

MAUREL, P ;

OMNES, F ;

DEFOUR, M ;

ACHER, O ;

TSUI, D ;

WEI, HP ;

GULDNER, Y ;

VIEREN, JP .

APPLIED PHYSICS LETTERS, 1987, 51 (22) :1821-1823

[6] THE GROWTH OF ULTRA-PURE INP BY VAPOR-PHASE EPITAXY [J].

TAYLOR, LL ;

ANDERSON, DA .

JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :55-59

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