FAST-NEUTRON DETECTOR USING PIN-TYPE SILICON PHOTODIODE

被引：15
作者：
HOSONO, Y
SJAFRUDDIN
IGUCHI, T
NAKAZAWA, M
机构：
[1] Department of Quantum Engineering and Systems Science, Faculty of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo, 113
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1995年 / 361卷 / 03期
关键词：
D O I：
10.1016/0168-9002(95)00206-5
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A new fast neutron detector has been developed using a PIN-type windowless photodiode with a polyethylene radiator of 45 mu m thickness and a low noise charge sensitive preamplifier for the photodiode. The detection efficiency was 7.8 X 10(-5) for fast neutrons and the detector was sensitive to neutrons with an energy higher than 1.2. MeV. Additionally the thickness of the depletion layer in the photodiode can be estimated using the saturated range of recoil proton pulses. A charge sensitive preamplifier with lower noise is described for the photodiode radiation detection systems. The input stage of this preamplifier consists of four FETs. The equivalent noise charge was obtained as 1.1 X 10(-16) C (EWHM) when connected to the photodiode. It can be concluded that this new system can be successfully used as a simple fast neutron detector.
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页码：554 / 557
页数：4
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