DISSOCIATION OF ELECTRONIC EXCITATIONS LOCALIZED NEAR VACANCY DEFECTS IN KI CRYSTAL

被引：2

作者：

VASILCHENKO, E ^{[1
]}

SARMUKHANOV, E ^{[1
]}

ELANGO, A ^{[1
]}

机构：

[1] AKTYUBINSK PEDAGOG INST,AKTYUBINSK 463019,KAZAKHSTAN

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1993年 / 177卷 / 02期

关键词：

D O I：

10.1002/pssb.2221770216

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

On the example of a KI crystal it is shown that, together with the radiative decay of electronic excitations localized near anion vacancies (e(alpha)) and vacancy quartets (e(q)), their nonradiative decay also occurs at 4.2 K. V(K) and F centers are created at e(alpha) decay and V(K) centers and electron vacancy complexes are created at e(q) decay. These defects arise as a result of e(alpha) and e(q) dissociation that occurs in the electric field of an anion vacancy or of a vacancy quartet. Some details of such a process are discussed.

引用

页码：405 / 412

页数：8

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