VERTICAL BRIDGMAN GROWTH OF CDGEAS2 WITH CONTROL OF INTERFACE SHAPE AND ORIENTATION

被引:53
作者
FEIGELSON, RS
ROUTE, RK
机构
关键词
D O I
10.1016/0022-0248(80)90161-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:261 / 273
页数:13
相关论文
共 23 条
[1]   SEMICONDUCTING A2B4CV2 COMPOUNDS [J].
BORSHCHE.AS ;
GORYUNOV.NA ;
KESAMANL.FP ;
NASLEDOV, DN .
PHYSICA STATUS SOLIDI, 1967, 21 (01) :9-&
[2]  
BORSHCHEVSKII AS, 1969, RUSS J INORG CHEM, V14, P8
[3]  
BORSHCHEVSKY AS, UNPUBLISHED
[4]   LINEAR AND NONLINEAR OPTICAL PROPERTIES OF TERNARY AII BIV C2V CHALCOPYRITE SEMICONDUCTORS [J].
BOYD, GD ;
BUEHLER, E ;
WERNICK, JH ;
STORZ, FG .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1972, QE 8 (04) :419-&
[5]  
Byer R. L., 1974, ANNUAL REV MATERIALS, V4, P147, DOI DOI 10.1146/ANNUREV.MS.04.080174.001051
[6]   CDGEAS2-A NEW NONLINEAR CRYSTAL PHASEMATCHABLE AT 10.6 MU-M [J].
BYER, RL ;
KILDAL, H ;
FEIGELSON, RS .
APPLIED PHYSICS LETTERS, 1971, 19 (07) :237-+
[7]   VERTICAL GRADIENT FREEZE GROWTH OF GALLIUM-ARSENIDE AND NAPHTHALENE - THEORY AND PRACTICE [J].
CHANG, CE ;
YIP, VFS ;
WILCOX, WR .
JOURNAL OF CRYSTAL GROWTH, 1974, 22 (04) :247-258
[8]   CONTROL OF INTERFACE SHAPE IN VERTICAL BRIDGMAN-STOCKBARGER TECHNIQUE [J].
CHANG, CE ;
WILCOX, WR .
JOURNAL OF CRYSTAL GROWTH, 1974, 21 (01) :135-140
[9]  
FEIGELSON RS, 1975, J CRYST GROWTH, V28, P138, DOI 10.1016/0022-0248(75)90035-4
[10]   CRYSTAL-GROWTH OF AIIBIVC2V CHALCOPYRITES [J].
GENTILE, AL ;
STAFSUDD, OM .
MATERIALS RESEARCH BULLETIN, 1974, 9 (02) :105-116