BORON-NITRIDE AND SILICON BORON-NITRIDE FILM AND POLISH CHARACTERIZATION

被引：11
|
作者：
NEUREITHER, B
BASA, C
SANDWICK, T
BLUMENSTOCK, K
机构：
[1] IBM CORP,TECHNOL PROD,HOPEWELL JCT,NY 12533
[2] SIEMENS AG,DIV SEMICOND,D-93049 REGENSBURG,GERMANY
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 12期
关键词：
D O I：
10.1149/1.2221134
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
A (silicon) boron nitride deposition process based on diborane and ammonia chemistry has been developed. Stable (silicon) boron nitride films have been obtained and the film properties were characterized. The mechanical resistance of boron nitride films against abrasives is utilized for stop layer applications for chemical mechanical polishing. The effectiveness of stop layers can be enhanced by end point detection systems. Two different systems will be discussed.
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页码：3607 / 3611
页数：5
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