A DESCRIBING FUNCTION-APPROACH TO BIPOLAR RF-POWER AMPLIFIER SIMULATION

[1] HIGH-CURRENT REGIMES IN TRANSISTOR COLLECTOR REGIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 257 - 263

[2] Clarke K.K., 1971, COMMUNICATION CIRCUI

[3] Getreu I., 1976, MODELING BIPOLAR TRA

[4] Ghandi S., 1977, SEMICONDUCTOR POWER, V1st

[5] AN INTEGRAL CHARGE CONTROL MODEL OF BIPOLAR TRANSISTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (05): : 827 - +

[6] REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON [J]. SOLID-STATE ELECTRONICS, 1977, 20 (02) : 77 - 89

[7] PREDICTION OF FT AND HFE AT HIGH COLLECTOR CURRENTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1031 - 1037

[8] Raab F. H., 1975, IEEE CIRCUITS SYSTEM, V7, P3

[9] COMPUTERIZED STUDY OF CLASS-C-BIASED RF-POWER AMPLIFIER [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (02) : 247 - 258

[10] VIDKJAER J, UNPUBLISHED

[1] HIGH-CURRENT REGIMES IN TRANSISTOR COLLECTOR REGIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 257 - 263

[2] Clarke K.K., 1971, COMMUNICATION CIRCUI

[3] Getreu I., 1976, MODELING BIPOLAR TRA

[4] Ghandi S., 1977, SEMICONDUCTOR POWER, V1st

[5] AN INTEGRAL CHARGE CONTROL MODEL OF BIPOLAR TRANSISTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (05): : 827 - +

[6] REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON [J]. SOLID-STATE ELECTRONICS, 1977, 20 (02) : 77 - 89

[7] PREDICTION OF FT AND HFE AT HIGH COLLECTOR CURRENTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1031 - 1037

[8] Raab F. H., 1975, IEEE CIRCUITS SYSTEM, V7, P3

[9] COMPUTERIZED STUDY OF CLASS-C-BIASED RF-POWER AMPLIFIER [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (02) : 247 - 258

[10] VIDKJAER J, UNPUBLISHED