SPECTRAL DEPENDENCE OF THE CHANGE IN REFRACTIVE-INDEX DUE TO CARRIER INJECTION IN GAAS-LASERS

被引：242
作者：
HENRY, CH
LOGAN, RA
BERTNESS, KA
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 07期
关键词：
D O I：
10.1063/1.329371
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：4457 / 4461
页数：5
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共 16 条
[1]   SELF-ABSORPTION EFFECTS ON RADIATIVE LIFETIME IN GAAS-GAALAS DOUBLE HETEROSTRUCTURES [J].
ASBECK, P .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) :820-822
[2]   CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV [J].
CASEY, HC ;
SELL, DD ;
WECHT, KW .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :250-257
[3]  
CASEY HC, 1978, HETEROSTRUCTURE LA A, P56
[4]   MEASUREMENT OF GAIN AND ABSORPTION-SPECTRA IN ALGAAS BURIED HETEROSTRUCTURE LASERS [J].
HENRY, CH ;
LOGAN, RA ;
MERRITT, FR .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3042-3050
[5]   MEASUREMENT OF SPECTRUM, BIAS DEPENDENCE, AND INTENSITY OF SPONTANEOUS EMISSION IN GAAS-LASERS [J].
HENRY, CH ;
LOGAN, RA ;
BERTNESS, KA .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4453-4456
[6]  
ITO M, 1980, IEEE J QUANT ELECTRO, V16, P9101
[7]  
LANDAU LD, 1960, ELECTRODYNAMICS CONT, P260
[8]   LATERAL TRANSVERSE-MODE INSTABILITY AND ITS STABILIZATION IN STRIPE GEOMETRY INJECTION-LASERS [J].
LANG, R .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) :718-726
[9]   INTENSITY PULSATION ENHANCEMENT BY SELF-FOCUSING IN SEMICONDUCTOR INJECTION-LASERS [J].
LANG, R .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) :L93-L96
[10]   OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV [J].
STURGE, MD .
PHYSICAL REVIEW, 1962, 127 (03) :768-+
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