BELOW-BANDGAP REFRACTIVE-INDEX OF ALAS GAAS MULTIPLE QUANTUM-WELLS

被引：2

作者：

HUBLER, GK ^{[1
]}

WADDELL, CN ^{[1
]}

DONOVAN, EP ^{[1
]}

ZAVADA, JM ^{[1
]}

机构：

[1] USA,RES OFF,RALEIGH,NC 27709

来源：

OPTICAL AND QUANTUM ELECTRONICS | 1991年 / 23卷 / 07期

关键词：

D O I：

10.1007/BF00624977

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Precision reflection measurements were performed on GaAs/AlAs superlattices of the same composition but different layer spacings. Nonlinear-least-squares fits to the data were performed to a single layer. Measurements were extracted for the superlattice thickness, thickness of a disturbed interface layer between the superlattice and substrate, the uniformity in composition and/or spacing and the composition. It was demonstrated that these nondestructive measurements in the infrared region (3000 to 12 000 cm-1) in conjunction with a simple single layer model are capable of accurately yielding the above quantities with high precision.

引用

页码：S883 / S893

页数：11

共 15 条

[1] OPTICAL-PROPERTIES OF ALXGA1-XAS [J].