MATERIAL LIMITATIONS WHICH CAUSE STRIATIONS IN CCD IMAGERS

被引：9

作者：

JASTRZEBSKI, L ^{[1
]}

LEVINE, PA ^{[1
]}

COPE, AD ^{[1
]}

HENRY, WN ^{[1
]}

BATTSON, DF ^{[1
]}

机构：

[1] RCA,DEPT ELECTRO OPT,DIV SOLID STATE,LANCASTER,PA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 08期

关键词：

D O I：

10.1109/T-ED.1980.20090

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1694 / 1701

页数：8

共 22 条

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[4]

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[5] DEPTH OF DEFECT ANNIHILATION IN SILICON BY PULSE LASER ANNEALING - EXPERIMENT AND THEORY [J].

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WU, CP .

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[6]

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[7]

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[8] CRYSTAL-GROWTH FROM MELT UNDER DESTABILIZING THERMAL GRADIENTS [J].

KIM, KM ;

WITT, AF ;

GATOS, HC .

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[9] ELECTRICAL-PROPERTIES OF STACKING-FAULTS AND PRECIPITATES IN HEAT-TREATED DISLOCATION-FREE CZOCHRALSKI SILICON [J].

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LEAMY, HJ ;

PATEL, JR .

APPLIED PHYSICS LETTERS, 1977, 30 (05) :217-219

[10]

KOCK AJR, 1977, SEMICONDUCTOR SILICO, P508

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