Hydrogen gettering in annealed oxygen-implanted silicon

被引：0

作者：

Misiuk, A. ^{[1
]}

Barcz, A. ^{[1
]}

Ulyashin, A. ^{[2
]}

Antonova, I. V. ^{[3
]}

Prujszczyk, M. ^{[1
]}

机构：

[1] Inst Electr Mat Technol, Al Lotnikow 46, PL-02668 Warsaw, Poland

[2] SINTEF, NO-0314 Oslo, Norway

[3] RAS, SB, Inst Semicond Phys, Novosibirsk, Russia

来源：

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2010年 / 13卷 / 02期

关键词：

Cz-Si; implantation; oxygen; hydrogen; high temperature; high pressure; gettering; defects;

D O I：

10.15407/spqeo13.02.161

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O prepared by O-2(-) implantation at the energy 200 keV and doses 10(14) and 10(17) cm(-2)) was investigated after annealing of Si:O at temperatures up to 1570 K, including also processing under enhanced hydrostatic pressure, up to 1.2 GPa. Depending on processing conditions, buried layers containing SiO2-x clusters and/or precipitates were formed. To produce hydrogen-rich Si:O,H structures, Si:O samples were subsequently treated in RF hydrogen plasma. As determined using secondary ion mass spectrometry, hydrogen was accumulated in sub-surface region as well as within implantation-disturbed areas. It has been found that hydrogen was still present in Si:O,H structures formed by oxygen implantation with the dose D = 10(7) cm(-2) even after post-implantation annealing up to 873 K. It is concluded that hydrogen accumulation within the disturbed areas in Si:O as well as in SOI structures can be used for recognition of defects.

引用

页码：161 / 165

页数：5

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