MOVPE GROWTH OF (AL)GAAS ON GAAS AND SI FOR PHOTOVOLTAIC APPLICATIONS

被引：2
作者：
DIETER, RJ
SCHOLZ, F
MARTIN, W
HANGLEITER, A
DORNEN, A
MICHLER, P
KURNER, W
LU, B
FRESE, V
HILGARTH, J
RASCH, KD
机构：
[1] 4. Physikalisches Institut, Universität Stuttgart, D-7000 Stuttgart 80
[2] Telefunken System Technik, D-7100 Heilbronn
来源：
MICROELECTRONIC ENGINEERING | 1992年 / 18卷 / 1-2期
关键词：
METALLORGANIC VAPOR PHASE EPITAXY; MOVPE; PHOTOVOLTAIC; APAH; HETEROEPITAXY;
D O I：
10.1016/0167-9317(92)90128-E
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaAs-AlGaAs heterostructures were grown by low-pressure metalorganic vapour phase epitaxy (MOVPE) and characterized by electrical and optical means. Time resolved photoluminescence revealed purely radiative recombination with carrier lifetimes of about 2-mu-s in GaAs/Al0.3Ga0.7As double heterostructures, whereas shorter lifetimes were observed in structures with higher Al contents due to nonradiative processes. Layers grown with a novel Al precursor showed somewhat better results due to lower Si incorporation as measured by SIMS and DLTS. GaAs on Si could be successfully grown with dislocation densities around 7 x 10(6) cm-2 by applying a two-step growth process and a thermal annealing step. Solar cell structures grown on GaAs showed good electrical properties, whereas similar structures grown on Si still suffered from cracks due to the large thickness of the whole structure.
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页码：189 / 205
页数：17
相关论文
共 19 条
  • [1] Olson, Kurtz, Kibbler, High-efficiency GaAs solar cells using GaInP<sub>2</sub> window layers, Proc. 21st IEEE Photovoltaic Spec. Conf., (1990)
  • [2] Jones, High purity metalorganics for MOVPE, Chemtronics, 4, (1989)
  • [3] Hangleiter, Coulomb enhancement of radiative and nonradiative recombination processes in semiconductors, Proc. 20th Int. Conf. on the Physics of Semiconductors, (1990)
  • [4] 't Hooft, van Opdorp, Temperature dependence of interface recombination and radiative recombination in (Al,Ga)As heterostructures, Appl. Phys. Lett., 42, (1983)
  • [5] Olson, Ahrenkiel, Dunlavy, Keyes, Kibbler, Ultralow recombination velocity at Ga<sub>0.5</sub>In<sub>0.5</sub>P/GaAs heterointerfaces, Appl. Phys. Lett., 55, (1989)
  • [6] Timmons, Colpitts, Venkatasubramanian, Measurement of AlGaAs/ AlGaAs interface recombination velocities using time-resolved photoluminescence, Appl. Phys. Lett., 56, (1990)
  • [7] Hostalek, Pohl, Brauers, Balk, Frese, Hartdegen, Hovel, Regel, Molassioti, Moser, Scholz, Schumann, Hartmann, Wassermann, New group III precursors for the MOVPE of GaAs and InP based material, MRS Proceedings, 145, (1989)
  • [8] Brauers, Alternative precursors for III–V MOVPE-Promises and problems, Prog. Cryst. Growth Charact., 22, (1991)
  • [9] Pohl, Hostalek, Schumann, Hartmann, Wassermann, Brauers, Regel, Hovel, Balk, Scholz, Physical properties of non-pyrophoric group III precursors for MOVPE, J. Cryst. Growth, 107, (1991)
  • [10] Chabal, Raghavachari, Surface infrared study of Si(100)-(2 x 1)H, Phys. Rev. Lett., 53, (1984)
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