HIGH-POWER OPERATION OF BROAD-AREA LASER-DIODES WITH GAAS AND ALGAAS SINGLE QUANTUM-WELLS FOR ND-YAG LASER PUMPING

被引：50
作者：
SHIGIHARA, K
NAGAI, Y
KARAKIDA, S
TAKAMI, A
KOKUBO, Y
MATSUBARA, H
KAKIMOTO, S
机构：
[1] Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1991年 / 27卷 / 06期
关键词：
D O I：
10.1109/3.89974
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have studied in detail the dependencies of the main lasing characteristics on the facet reflectivity for GaAs and AlGaAs single-quantum-well (SQW) separate-confinement heterostructure (SCH) broad-area laser diodes (LD's). We identified conditions for the facet reflectivity to achieve optimum values. Under those conditions, we obtained maximum output powers of 2.9 and 2.6 W for GaAs-SQW and AlGaAs-SQW single-stripe LD's, respectively, for 150-mu-m stripe width, lasing at about 808 nm under a continuous-wave (CW) condition. Moreover, those LD's have been stably operating for over 2000 h under the condition of 1 W constant output power with automatic power control circuits at 45-degrees-C in CW operation.
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页码：1537 / 1543
页数：7
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