EVALUATION OF EPITAXIAL PLANAR TRANSISTORS BASED ON THEIR DOUBLE DIFFUSED IMPURITY PROFILE DISTRIBUTION

被引：1
|
作者：
SRIVASTAVA, A
机构：
来源：
MICROELECTRONICS AND RELIABILITY | 1978年 / 18卷 / 06期
关键词：
D O I：
10.1016/0026-2714(78)90112-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：505 / 510
页数：6
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