CHARACTERIZATION OF NB/ALOX-AL/NB JUNCTION STRUCTURES BY ANODIZATION SPECTROSCOPY

被引:16
作者
IMAMURA, T
HASUO, S
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D O I
10.1109/20.92840
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码:1131 / 1134
页数:4
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共 8 条
[1]   HIGH-QUALITY REFRACTORY JOSEPHSON TUNNEL-JUNCTIONS UTILIZING THIN ALUMINUM LAYERS [J].
GURVITCH, M ;
WASHINGTON, MA ;
HUGGINS, HA .
APPLIED PHYSICS LETTERS, 1983, 42 (05) :472-474
[2]  
Hasuo S., 1987, SUPERCONDUCTIVITY EL, P22
[3]   PREPARATION AND CHARACTERISTICS OF NB/AL-OXIDE-NB TUNNEL-JUNCTIONS [J].
HUGGINS, HA ;
GURVITCH, M .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :2103-2109
[4]  
KADIN AM, 1986, MATER RES SOC S P, V56, P473
[5]   A SUBNANOSECOND JOSEPHSON 16-BIT ALU [J].
KOTANI, S ;
FUJIMAKI, N ;
IMAMURA, T ;
HASUO, S .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1988, 23 (02) :591-596
[6]  
KOTANI S, 1988, FEB INT SOL STAT CIR
[7]   HIGH-QUALITY NB/AL-ALOX/NB JOSEPHSON JUNCTION [J].
MOROHASHI, S ;
SHINOKI, F ;
SHOJI, A ;
AOYAGI, M ;
HAYAKAWA, H .
APPLIED PHYSICS LETTERS, 1985, 46 (12) :1179-1181
[8]   EXPERIMENTAL INVESTIGATIONS AND ANALYSIS FOR HIGH-QUALITY NB/AL-ALOX/NB JOSEPHSON-JUNCTIONS [J].
MOROHASHI, S ;
HASUO, S .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (10) :4835-4849