TWO-DIMENSIONAL ELECTRON-GAS OF VERY HIGH MOBILITY IN PLANAR DOPED HETEROSTRUCTURES

被引：31

|

作者：

ETIENNE, B

PARIS, E

机构：

[1] CNRS, Bagneux, Fr, CNRS, Bagneux, Fr

来源：

JOURNAL DE PHYSIQUE | 1987年 / 48卷 / 12期

关键词：

D O I：

10.1051/jphys:0198700480120204900

中图分类号：

学科分类号：

摘要：

10

引用

收藏

页码：2049 / 2052

页数：4

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