TWO-DIMENSIONAL ELECTRON-GAS OF VERY HIGH MOBILITY IN PLANAR DOPED HETEROSTRUCTURES

被引：31
作者：
ETIENNE, B
PARIS, E
机构：
[1] CNRS, Bagneux, Fr, CNRS, Bagneux, Fr
来源：
JOURNAL DE PHYSIQUE | 1987年 / 48卷 / 12期
关键词：
D O I：
10.1051/jphys:0198700480120204900
中图分类号：
学科分类号：
摘要：
10
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页码：2049 / 2052
页数：4
相关论文
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