ELECTROLYTE ELECTROREFLECTANCE STUDY OF THE BAND OFFSET IN A GAAS GA0.69AL0.31AS SUPERLATTICE

被引：12
|
作者：
RACCAH, PM [1 ]
GARLAND, JW [1 ]
ZHANG, Z [1 ]
CHAMBERS, FA [1 ]
VEZZETTI, DJ [1 ]
机构：
[1] AMOCO CORP,AMOCO RES CTR,NAPERVILLE,IL 60566
来源：
PHYSICAL REVIEW B | 1987年 / 36卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.36.4271
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4271 / 4278
页数：8
相关论文
共 50 条
  • [21] Electrical and structural characterization of Mg-doped p-type Al0.69Ga0.31N films on SiC substrate
    Chakraborty, Arpan
    Moe, Craig G.
    Wu, Yuan
    Mates, Tom
    Keller, Stacia
    Speck, James S.
    DenBaars, Steven P.
    Mishra, Umesh K.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (05)
  • [22] Noise-enhanced chaos in a weakly coupled GaAs/(Al,Ga) As superlattice
    Yin, Zhizhen
    Song, Helun
    Zhang, Yaohui
    Ruiz-Garcia, Miguel
    Carretero, Manuel
    Bonilla, Luis L.
    Biermann, Klaus
    Grahn, Holger T.
    PHYSICAL REVIEW E, 2017, 95 (01)
  • [23] HOLE SUBBANDS IN GAAS-AL-CHI-GA1-CHI-AS SUPERLATTICE
    TANG, H
    HUANG, K
    CHINESE PHYSICS, 1987, 7 (04): : 1101 - 1109
  • [24] Electron transport in a short Al0.265Ga0.735As/GaAs superlattice
    Bishop, PJ
    Daniels, ME
    Ridley, BK
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (05) : 482 - 487
  • [25] GAAS ELECTROLYTE ELECTROREFLECTANCE - LOW-FIELD SPECTRA AND FLAT-BAND POTENTIAL SHIFT MEASUREMENTS
    SALVADOR, P
    DIEZ, YG
    SOTO, LG
    SURFACE SCIENCE, 1991, 245 (03) : 324 - 332
  • [26] Effect of Al and Ga interdiffusion on the electronic states in GaAs/Ga1−xAlxAs semiconductor superlattice
    V. N. Mughnetsyan
    A. A. Kirakosyan
    Journal of Contemporary Physics (Armenian Academy of Sciences), 2009, 44 : 140 - 144
  • [27] Effect of Al and Ga interdiffusion on the electronic states in GaAs/Ga1-xAlxAs semiconductor superlattice
    Mughnetsyan, V. N.
    Kirakosyan, A. A.
    JOURNAL OF CONTEMPORARY PHYSICS-ARMENIAN ACADEMY OF SCIENCES, 2009, 44 (03) : 140 - 144
  • [28] ENERGY-BAND ALIGNMENT IN GAAS (AL,GA)AS HETEROSTRUCTURES
    BATEY, J
    WRIGHT, SL
    SURFACE SCIENCE, 1986, 174 (1-3) : 320 - 323
  • [29] Interface control and band offset at the Ga0.52In0.48P an GaAs heterojunction
    Cai, C
    Nathan, MI
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (04): : 2096 - 2099
  • [30] DETERMINATION OF THE VALENCE-BAND DISCONTINUITY BETWEEN GAAS AND (AL,GA)AS BY THE USE OF P+-GAAS-(AL,GA)AS-P--GAAS CAPACITORS
    ARNOLD, D
    KETTERSON, A
    HENDERSON, T
    KLEM, J
    MORKOC, H
    APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1237 - 1239
12345