ELECTROLYTE ELECTROREFLECTANCE STUDY OF THE BAND OFFSET IN A GAAS GA0.69AL0.31AS SUPERLATTICE

被引：12
|
作者：
RACCAH, PM [1 ]
GARLAND, JW [1 ]
ZHANG, Z [1 ]
CHAMBERS, FA [1 ]
VEZZETTI, DJ [1 ]
机构：
[1] AMOCO CORP,AMOCO RES CTR,NAPERVILLE,IL 60566
来源：
PHYSICAL REVIEW B | 1987年 / 36卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.36.4271
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4271 / 4278
页数：8
相关论文
共 50 条
  • [1] ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF THE SN DX CENTER IN DIRECT-GAP GA0.69AL0.31AS
    VONBARDELEBEN, HJ
    BOURGOIN, JC
    BASMAJI, P
    GIBART, P
    PHYSICAL REVIEW B, 1989, 40 (08): : 5892 - 5895
  • [2] PERSISTENT PHOTOCONDUCTIVITY (PPC) IN A MODULATION DOPED GAAS/AL0.31GA0.69AS HETEROJUNCTION
    GENNSER, U
    ZURCHER, P
    ILEGEMS, M
    WEIMANN, G
    HELVETICA PHYSICA ACTA, 1984, 57 (04): : 500 - 500
  • [3] Influence of the band-offset on the electronic temperature of GaAs/Al(Ga)As superlattice quantum cascade lasers
    Spagnolo, V
    Scamarcio, G
    Schrenk, W
    Strasser, G
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (04) : S110 - S112
  • [4] First principles valence band offset for Ga-interface in Ga1-xInxP/GaAs superlattice
    Agrawal, B. K.
    Agrawal, Savitri
    Srivastava, Rekha
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 33 (01): : 17 - 23
  • [5] Vertical defects in heavily mg-doped Al0.69Ga0.31N
    Wu, Y.
    Moe, C. G.
    Keller, S.
    DenBaars, S. P.
    Speck, J. S.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (10): : 3423 - 3428
  • [6] EPR STUDIES OF DX CENTER RELATED PARAMAGNETIC STATES IN GA0.69AL0.31AS-SN
    VONBARDELEBEN, HJ
    BOURGOIN, JC
    BASMAJI, P
    GIBART, P
    CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES, 1989, 148 : 439 - 444
  • [7] Study of GaAs/GaAlAs Multilayer Structural Materials by Electrolyte Electroreflectance
    Wang Zhoucheng
    Peng Ruiwu
    Qian Youhua Fujian Institute of Research on the Strure of Matter
    Rare Metals, 1990, (02) : 131 - 134
  • [8] Conduction band offset ratio of the (In,Ga)As/GaAs system and (In,Ga)As alloy properties
    Leymarie, J
    Disseix, P
    Rezki, M
    Monier, C
    Vasson, A
    Vasson, AM
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3): : 147 - 150
  • [9] Conduction band offset ratio of the (In,Ga)As/GaAs system and (In,Ga)As alloy properties
    Leymarie, J.
    Disseix, P.
    Rezki, M.
    Monier, C.
    Vasson, A.
    Vasson, A.-M.
    Materials science & engineering. B, Solid-state materials for advanced technology, 1997, B44 (1-3): : 147 - 150
  • [10] CHARACTERIZATION OF STRAIN AT GA1-XALXAS-GAAS INTERFACES USING ELECTROLYTE ELECTROREFLECTANCE
    POLLAK, FH
    WOODALL, JM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1108 - 1112
12345