LOW-TEMPERATURE GROWTH OF SIO2 THIN-FILM BY DOUBLE-EXCITATION PHOTO-CVD

被引：78

作者：

INOUE, K

MICHIMORI, M

OKUYAMA, M

HAMAKAWA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 06期

关键词：

D O I：

10.1143/JJAP.26.805

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：805 / 811

页数：7

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