MAGNETIC PERTURBATIONS OF EXCITONS BOUND TO AN ISOELECTRONIC HYDROGEN-RELATED DEFECT IN SILICON

被引：9

作者：

DAVIES, G

机构：

[1] Physics Department, Kings College London, London WC2R 2LS, Strand

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.51.13783

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It is shown that recent data on the optical properties of the B711 (1.1377 eV) hydrogen-related defect in silicon can be fitted using a physically simple model in which the excited states are constructed from the band extrema of silicon. The model describes the energy levels of the center, the relative intensities of the transitions, and the effects of magnetic fields up to 12 T. The center lies in the limit of weak binding of the known singlet/triplet isoelectronic systems in silicon. © 1995 The American Physical Society.

引用

页码：13783 / 13785

页数：3

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