ANALYSIS OF THE TEMPERATURE-DEPENDENCE OF HOT-CARRIER-INDUCED DEGRADATION IN BIPOLAR-TRANSISTORS FOR BI-CMOS

被引：18
作者：
MOMOSE, HS
IWAI, H
机构：
[1] ULSI Research Laboratory, Toshiba Corporation, Kawasaki 210, Komukai-Toshiba-cho, Saiwai-ku
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 06期
关键词：
D O I：
10.1109/16.293311
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The temperature dependence of emitter-base reverse stress degradation in bipolar transistors for Bi-CMOS circuits was studied. A suitable measure of degradation in the operating temperature range was chosen after careful consideration of the fact that bipolar transistor characteristics are very sensitive to temperature changes. The worst-case temperature conditions within the transistors' operating range were determined. Degradation was found to be worst at around 50-degrees-C-a result of a tradeoff between thermal recovery from degradation and the effects of bandgap narrowing on bipolar characteristics. The recovery phenomena after degradation had taken place were also investigated in detail.
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收藏
页码：978 / 987
页数：10
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