ANALYSIS OF THE TEMPERATURE-DEPENDENCE OF HOT-CARRIER-INDUCED DEGRADATION IN BIPOLAR-TRANSISTORS FOR BI-CMOS

被引：18
|
作者：
MOMOSE, HS
IWAI, H
机构：
[1] ULSI Research Laboratory, Toshiba Corporation, Kawasaki 210, Komukai-Toshiba-cho, Saiwai-ku
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 06期
关键词：
D O I：
10.1109/16.293311
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The temperature dependence of emitter-base reverse stress degradation in bipolar transistors for Bi-CMOS circuits was studied. A suitable measure of degradation in the operating temperature range was chosen after careful consideration of the fact that bipolar transistor characteristics are very sensitive to temperature changes. The worst-case temperature conditions within the transistors' operating range were determined. Degradation was found to be worst at around 50-degrees-C-a result of a tradeoff between thermal recovery from degradation and the effects of bandgap narrowing on bipolar characteristics. The recovery phenomena after degradation had taken place were also investigated in detail.
引用
收藏
页码：978 / 987
页数：10
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