ELECTRICAL AND MICROSTRUCTURAL PROPERTIES OF BATIO3 THIN-FILMS ON P-SI SUBSTRATES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：13

作者：

KIM, TW

JUNG, M

YOON, YS

KANG, WN

SHIN, HS

YOM, SS

LEE, JY

机构：

[1] KOREA INST SCI & TECHNOL,APPL PHYS LAB,SEOUL,SOUTH KOREA

[2] KOREA ADV INST SCI & TECHNOL,DEPT ELECTR MAT ENGN,DAEJON 305701,SOUTH KOREA

来源：

SOLID STATE COMMUNICATIONS | 1993年 / 86卷 / 09期

关键词：

D O I：

10.1016/0038-1098(93)90140-I

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Metalorganic chemical vapor deposition of BaTiO3 using Ba(tmhd)2, Ti(OC3H7)4, and N2O via thermal pyrolysis was performed in order to produce BaTiO3 insulator gates with a dielectric constant of high magnitude. Transmission electron microscopy results showed that the BaTiO3 films had a polycrystalline. Room-temperature current-voltage and capacitance-voltage measurements clearly revealed metal-insulator-semiconductor behavior for the samples with a BaTiO3 insulator gate. The dielectric constant determined from the capacitance-voltage measurements was as large as 1157. These results indicate that the BaTiO3 layer may be used for high-density dynamic-memory applications.

引用

页码：565 / 568

页数：4

共 19 条

[1] EPITAXIAL-GROWTH OF BATIO3 THIN-FILMS BY PLASMA-ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].